PTFB182557SH Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW Drive-Up
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 1842 MHz
19.5
19
18.5 ^Gain
18
17.5 Efficiency
17
40
45
50
Output Power Avg (dBm)
60
50
40
30
20
10
55
Broadband Circuit Impedance
Frequency
MHz
1805
1842.5
1880
Z Source W
R
jX
1.48
–3.43
2.05
–4.08
2.82
–4.70
Z Load W
R
jX
2.33
–5.42
2.22
–5.07
1.89
–5.05
PTFB182557SH
Z Source
D
Z Load
G
S
Data Sheet – DRAFT ONLY
4 of 11
Rev. 02, 2012-06-25