PTFB182557SH Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB182557SH
Confidential, Limited Internal Distribution
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current

On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.4 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 200 W CW)
Ordering Information
Type and Version
PTFB182557SH V1 R250
Order Code
PTFB182557SHV1R250XTMA1
Symbol
V(_BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1
10
—
3.3
1
Unit
V
µA
µA
W
V
µA
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.232
Unit
V
V
°C
°C
°C/W
Package and Description
H-34288G-4/2, earless flange
Shipping
Tape & Reel, 250 pcs
Data Sheet – DRAFT ONLY
2 of 11
Rev. 02, 2012-06-25