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PTFB182557SH Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET
PTFB182557SH
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
250 W, 28 V, 1805 – 1880 MHz
Description
The PTFB182557SH is a 250-watt LDMOS FET specifically designed
for use in Doherty cellular power amplifier applications in the 1805
to 1880 MHz frequency band. Input and output matching has been
optimized for maximum performance as the peak side transistor in
Doherty amplifiers. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFB182557SH
Package H-34288G-4/2
Single-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 1400 mA, ƒ = 1842 MHz,
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-10
-20
-30
-40
-50
-60
38
50
Efficiency
40
30
ACP Up 20
ACP Low
10
0
43
48
53
Output Power Avg (dBm)
RF Characteristics
Features
• Broadband internal matching
• Optimized for use as peak side in Doherty ampli-
fiers
• Typical two-carrier WCDMA performance,
1842 MHz, 28 V, 3GPP signal, PAR = 8 dB,
10 MHz carrier spacing
- Average output power = 75 W
- Linear gain = 18.5 dB
- Efficiency = 31%
- Intermodulation distortion = –31 dBc
- Adjacent channel power= –36 dBc
• Typical CW performance, 1842 MHz, 28 V
- Output power at P1dB = 250 W
- Efficiency = 49%
- Gain = 18 dB
• Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1350 mA, POUT = 60 W avg, ƒ = 1842.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 11
Min Typ
18
19
31
32.5
—
–33
Max
—
—
–31
Unit
dB
%
dBc
Rev. 02, 2012-06-25