PTFB182557SH Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB182557SH
Confidential, Limited Internal Distribution
Package Outline Specific_Hati_-o₃ns_{4288G-4/2 (wide leads)}
Package H-34288G-4/2 with Formed Leads
D 45° x .64
[.025]
2X 30.0°
V
CL
4X R0.51+-.1.338
[R.020+-.0.00155]
1.02
[.040]
21.72
[.855]
D
G
CL
2X 17.75
[.699]
22.35±.20
[.880±.008]
2X
0.13
+0.13
-0.08
[.005 ^+-.0.00035]
1.98
[.078]
(SPH V)
2X 2.29
[.090]
V
9.78
[.385]
CL
9.40
[.370]
1.49±0.25
[.059±.010]
1.00
+0.25
-0.10
[.039 ^+-.0.00140]
(14.75±0.50
[.581±.020])
4X 5°±3°
4.04+-.1.235
[.159+-.0.00150]
2X 0.13±0.08
[.005±.003]
(SPH D, G)
C66065-A0003-C741-01-0027
H-34288G-4/2_po_wide_04-02-2012
23.11
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±0.127 [0.005] unless specified otherwise.
4. Pins: D – drain; S – source; G – gate; V – V_DD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet – DRAFT ONLY
10 of 11
Rev. 02, 2012-06-25