PTFB182557SH Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB182557SH
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 1842 MHz,
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
20
16
Gain
Efficiency
12
PAR @ 0.01% CCDF
8
4
ACP Low
0
38
43
48
Output Power Avg (dBm)
50
30
10
-10
-30
-50
53
Two-tone Drive-up (over temperature)
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 1842 MHz
20
50
19
40
18
30
Gain
17
20
16
15
38
Efficiency
-20°C
+25°C
+85°C
43
48
Output Power (dBm)
10
0
53
Two-carrier WCDMA 3GPP Drive Up
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 1842 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
19
45
18
Gain
35
17
25
16
15
38
Efficiency
43
48
Output Power Avg (dBm)
15
5
53
Two-carrier WCDMA 3GPP Drive Up
V_DD = 28 V, I_DQ = 1400 mA, ƒ = 1842 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-5
50
IMD Low
IMD Up
-15
ACPR
40
Efficiency
-25
30
-35
20
-45
10
-55
0
38
43
48
53
Output Power Avg(dBm)
Data Sheet – DRAFT ONLY
3 of 11
Rev. 02, 2012-06-25