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PTFB093608SV_15 Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET | |||
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PTFB093608SV
Typical Performance (cont.)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20
960 Lower
-25
960 Upper
940 Lower
-30
940 Upper
920 Lower
920 Upper
-35
-40
IMD Low
-45
-50
IMD Up
-55
36 38 40 42 44 46 48 50 52 54
Output Power Avg. (dBm)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.8 A, Æ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-10
50
Efficiency
-20
40
IMD Up
-30
30
IMD Low
-40
ACPR 20
-50
10
-60
35
40
45
50
Output Power Avg. (dBm)
0
55
Broadband Circuit Impedance
Frequency
MHz
910
920
930
940
950
960
970
Z Source W
R
jX
1.84
â1.74
1.78
â1.73
1.72
â1.72
1.66
â1.71
1.61
â1.69
1.55
â1.66
1.50
â1.64
Z Load W
R
jX
0.89
â1.52
0.86
â1.46
0.83
â1.40
0.81
â1.35
0.79
â1.29
0.77
â1.23
0.75
â1.17
Z Source
G
G
D Z Load
S
D
Data Sheet
4 of 13
Rev. 05, 2015-01-22
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