PTFB093608SV_15 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB093608SV
Thermally-Enhanced High Power RF LDMOS FET
320 W, 28 V, 920 – 960 MHz
Description
The PTFB093608SV is an LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 920 to 960
MHz frequency band. Features include input and output matching,
high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon’s advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB093608SV
Package H-37275G-6/2
Two-carrier WCDMA 3GPP Drive Up
V_DD = 28 V, I_DQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
21.0
60
20.5
50
20.0
40
Gain
19.5
30
19.0
20
18.5
18.0
35
Efficiency
40
45
50
Output Power Avg. (dBm)
10
0
55
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
and Doherty applications
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
960 MHz, 28 V, device leads in gullwing
configuration
- Average output power = 160 W
- Gain = 19 dB
- Efficiency = 40%
• Integrated ESD protection
• Low thermal resistance
• Capable of handling 10:1 VSWR @ 32 V, 960 MHz,
+3 dB Input Overdrive = 500 W (CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (device with straight leads, tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.8 A, P_OUT = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
18
20
—
dB
hD
33.5
34
—
%
Adjacent Channel Power Ratio
ACPR
—
–36
–31.5
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 05, 2015-01-22