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PTFB093608SV_15 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET | |||
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PTFB093608SV
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 2.8 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
â
â
â
2.5
â
Typ
â
â
â
0.05
3.9
â
Max
â
1.0
10.0
â
4.5
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 360 W CW)
Symbol Value
VDSS
VGS
TJ
TSTG
RqJC
65
â6 to +10
200
â40 to +150
0.12
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
Order Code
Package
Package Description Shipping
PTFB093608SV V2 R250 PTFB093608SVV2R250XTMA1 H-37275G-6/2 Earless flange
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 05, 2015-01-22
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