PTFB093608SV_15 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB093608SV
Typical Performance (data taken in a production test fixture, device leads in gullwing configuration)
Single-carrier WCDMA Broadband
Gain & Return Loss vs. Frequency
V_DD = 28 V, I_DQ = 2.8 A, P_OUT = 100 W
Single-carrier WCDMA Broadband
Efficiency & ACPR vs. Frequency
V_DD = 28 V, I_DQ = 2.8 A, P_OUT = 100 W
21
0
42
-20
Gain
20
-10
19
-20
IRL
18
-30
860 880 900 920 940 960 980 1000 1020
Frequency (MHz)
37
-25
Efficiency
32
-30
27
-35
ACPU
22
-40
860 880 900 920 940 960 980 1000
Frequency (MHz)
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 2.8 A, ƒ = 960 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-20
-30
-40
ACP Low
-50
-60
ACP Up
Efficiency
-70
34
38
42
46
50
Output Power Avg. (dBm)
50
40
30
20
10
0
54
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 2.8 A, ƒ = 960 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
24
60
Gain
20
40
16
Efficiency
20
12
0
PAR @ .01% CCDF
8
-20
4
ACP Low
-40
0
-60
36 38 40 42 44 46 48 50 52 54
Output Power Avg. (dBm)
Data Sheet
3 of 13
Rev. 05, 2015-01-22