PTFB093608SV_15 Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB093608SV
Package Outline Specifications
Package H-37275G-6/2
2XD 45° x .64
[.025]
2X 30°
(13.72
[.540])
30.61
[1.205]
CL
2X (1.27
[.050])
2X 0.13+-00.0.183
[^{.005+-.0.00035}]
(SPH V1, V2)
2X 2.22
[.087]
2X 2.29
[.090]
V1
D1
D2
V2
10.16
[.400]
CL
9.14
CL
[.360]
4X R0.51+-.1.338
[^{R.020+-.0.00155}]
(1.63
[0.064])
G1
CL
2X 26.16
[1.030]
G2
CL
4X 12.45
[.490]
31.24±0.28
[1.230±.011]
CL
5°±3°
4.58+-00.1.235
[ ] ^{.180+-.0.00150}
6X 1.50±0.25
[.059±.010]
6X 1.00+-00.1.205
[^{.039+-.0.00140}]
(15.14±0.50
[.596±.020])
4X 0.13±0.08
[.005±.003]
(SPH D1, D2, G1, G2)
H-H37-3277257G5-G6-/62/_2g_wg_wp_op_o0_30.31__0077--2254--22001133
32.26
[1.270]
S
Diagram Notes—unless otherwise specified:
Diagram1.NoItnetse—rpurentledsims eonthseiorwnsisaensdpteocleifireadn:ces per ASME Y14.5M-1994.
12.. InPtreimrpareryt dimensions anred mtomle.raAnltceernsapterdAimSeMnEsiYo1n4s.a5rMe-i1n9c9h4e.s.
23.. PArlilmtoalreyradnimceesns±io0n.1s2a7re[.0m0m5]. Aunltleersnsatsepedcimifieendsoiothnesrawriesein. ches.
34.. APllintosl:eDra1n,cDe2s –0.d1r2a7in±s;.0G511, G[.020–5 g±a.t0e0s2; ]Su–nlessosusrcpee;cVif1ie,dVo2th–eVrw_DDi.se.
45.. PLinesa:dGth1i,cGkn2e=ssg: a0t.e1;3D+1,0D.0251=/–d0ra.0in2;5Sm=mso[0u.r0c0e5;+V01.,0V02/=–0V.0_D0_D1 inch].
56.. LGeaodldtphliacktinegstsh:ic0k.1n2e7ss±: 01.01541±[.00.0358 ±m.0ic0r2o]n. [45 ± 15 microinch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
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http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 05, 2015-01-22