PTFB072707FH Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Typical Performance (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.0 A, ƒ = 768 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
ACPR
-30
Efficiency
40
-40
20
-50
b072707fh-gr6
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 2.0 A
21
75
20 ^Gain
60
19
728 MHz
45
748 MHz
18
768 MHz
30
17
16
36
Efficiency
40
44
48
52
Output Power (dBm)
15
b072707fh-gr8
0
56
PTFB072707FH
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.0 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
728 MHz IMD Low
728 MHz IMD Up
-25
748 MHz IMD Low
748 MHz IMD Up
768 MHz IMD Low
-35
768 MHz IMD Up
-45
-55
32
36
40
44
48
Output Power (dBm)
b072707fh-gr7
52
CW Performance
at selected supply voltage
I_DQ = 2.0 A, ƒ = 728 MHz
21
75
20
Gain
60
19
45
V_DD = 24 V
V_DD = 28 V
18
V_DD = 32 V
30
17
15
Efficiency
16
b072707fh-gr9
0
34 36 38 40 42 44 46 48 50 52 54 56
Output Power (dBm)
Data Sheet
4 of 10
Rev. 02.1, 2016-06-15