PTFB072707FH Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB072707FH
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current

Gate Leakage Current
On-State Resistance
Operating Gate Voltage
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 2.0 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 240 W CW)
Symbol
V_(BR)DSS
I_DSS
I_DSS
I_GSS
R_DS(on)
V_GS
Min
65
—
—
—
—
2.5
Typ
—
—
—
—
0.05
3.8
Max
Unit
—
V
1.0 µA
10.0 µA
1.0 µA
—
W
4.5
V
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.17
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB072707FH V1 R0
PTFB072707FH V1 R250
Order Code
Package and Description
PTFB072707FHV1R0XTMA1
H-34288G-4/2, ceramic open-cavity,
earless flange
PTFB072707FHV1R250XTMA1 H-34288G-4/2, ceramic open-cavity,
earless flange
Shipping
Tape & reel, 50 pcs
Tape & reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.1, 2016-06-15