PTFB072707FH Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB072707FH
Thermally-Enhanced High Power RF LDMOS FET
270 W, 28 V, 728 – 768 MHz
Description
The PTFB072707FH is a LDMOS FET intended for use in multi-
standard cellular power amplifier applications. Features include
input and output matching, high gain and thermally-enhanced
package with earless flanges. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PTFB072707FH
Package H-34288G-4/2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.0 A, ƒ = 728 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
19 ^Gain
30
18
20
17
Efficiency
10
Features
• Broadband internal matching
• Wide video bandwidth
• Typical pulsed performance, 768 MHz, 28 V
(10 μs pulse width,10% duty cycle, class AB)
- Output power at P_1dB = 320 W
- Gain = 17.5 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body Model
(HBM) Class 2 minimum (per JESD22-A114)
• Low thermal resistance
• RoHS compliant
• Capable of handling 5:1 VSWR @ 28 V, 270 W
(CW) output power
16
b072707fh-gr1
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
RF Specifications
One-carrier WCDMA Characteristics (tested in Infineon production test fixture)
V_DD = 28 V, I_DQ = 2.0 A, P_OUT = 60 W average, ƒ = 768 MHz. 3GPP signal: 3.84 MHz channel bandwidth,
10 dB peak/average @ 0.01% CCDF.
Characteristic
Symbol Min Typ
Max
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
h_D
ACPR
18
18.5
—
38
39
—
—
–33
–32.5
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-06-15