PTFB072707FH Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB072707FH
Typical Performance (data taken in an Infineon production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.0 A, ƒ = 748 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
Gain
19
30
18
20
17
Efficiency
10
16
b072707fh-gr2
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.0 A, ƒ = 768 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
19
Gain
30
18
20
17
Efficiency
10
16
b072707fh-gr3
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.0 A, ƒ = 728 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
ACPR
-30
Efficiency
40
-40
20
-50
b072707fh-gr4
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.0 A, ƒ = 748 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
ACPR
-30
Efficiency
40
-40
20
-50
b072707fh-gr5
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02.1, 2016-06-15