PTF240101S Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz

PTF240101S
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 180 mA, ƒ₁ = 2679 MHz, ƒ₂ = 2680 MHz
-20
-30
3rd Order
-40
5th Order
-50
-60 _{7th Order}
-70
-80
33
35
37
39
41
43
Output Power, PEP (dBm)
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.04
0.05
1.03
0.28
0.51
1.02
0.74
1.01
0.97
1.00
1.2
0.99
0.98
0.97
0.96
-20
0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance Data
Z Source
D
Z Load
G
S
Frequency
MHz
2400
2450
2500
2550
2600
2650
2700
Z Source Ω
R
jX
3.8
–13.5
3.4
–12.7
3.1
–10.5
3.3
–10.0
2.6
–8.3
2.9
–7.4
2.5
–6.0
Data Sheet
Z Load Ω
R
jX
4.7
–3.6
4.3
–3.3
4.0
–2.8
3.6
–2.4
3.4
–1.9
3.2
–1.4
3.1
–1.0
4 of 12
Z₀ = 50 Ω
Z Load
2700 MHz
2400 MHz
0.1 ^{Z Source}
2700 MHz
0.2
2400 MHz
0.3
Rev. 05, 2007-04-12