PTF240101S Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz

PTF240101S
Typical Performance, CDMA2000 Operation (measurements taken in broadband test fixture)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 180 mA, ƒ = 2680 MHz
18
17 _Gain
16
15
14
13
12
11
28
70
60
50
40
30
Efficiency
20
10
0
33
38
43
Output Power (dBm)
Broadband Performance
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 10 W
40
5
35
0
Efficiency
30
-5
25
Return Loss -10
20
-15
15 _Gain
10
2600
2620
2640
2660
2680
Frequency (MHz)
-20
-25
2700
Gain vs. Output Power
V_DD = 28 V, ƒ = 2680 MHz
18.0
17.5
17.0 ^{IDQ = 220 mA}
16.5
16.0 ^IDQ ^{= 180 mA}
15.5 ^{IDQ = 100 mA}
15.0
14.5
26 29 32 35 38 41 44
Output Power (dBm)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 180 mA, ƒ = 2680 MHz
70
60
50
40
30
20
10
0
29
-30
Adj
-35
-40
-45
-50
-55
Alt–1
Efficiency ^-60
-65
31 33 35 37 39
Output Power (dBm), Avg.
-70
41
Data Sheet
3 of 12
Rev. 05, 2007-04-12