PTF240101S Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz

PTF240101S
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture) (cont.)
V_DD = 28 V, I_DQ = 160 mA, ƒ = 2680 MHz, tone spacing = 7 MHz
Characteristic
Gain
Efficiency at 1 W avg.
Intermodulation Distortion at 1 W avg.
Compression at 10 W avg.
Input Return Loss at 2.4 GHz
Symbol Min Typ
G_ps
η_D
IMD
14
15
9
10
—
–42
P_comp
IRL
—
0.3
–10
–12
Max
—
—
–40
1.0
—
Unit
dB
%
dBc
dB
dB
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 180 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 10 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF240101S
Package Outline
H-32259-2
Package Description
Thermally-enhanced, surface mount
Marking
PTF240101S
Data Sheet
2 of 12
Rev. 05, 2007-04-12