PTF240101S Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz

PTF240101S
Thermally-Enhanced High Power RF LDMOS FET
10 W, 2400 – 2700 MHz
Description
The PTF240101S is a 10-watt, internally-matched GOLDMOS^® FET device
intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz
band. Full gold metallization ensures excellent device lifetime and reliability.
Three-Carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 180 mA, ƒ = 2680 MHz
40
35
30
Efficiency
25
ACP Up
20
15
ALT Up
10
ACP Low
5
0
28 30 32 34 36 38 40
Output Power (dBm), PEP
-30
-35
-40
-45
-50
-55
-60
-65
-70
42
PTF240101S
Package H-32259-2
Features
• Pb-free and RoHS-compliant
• Typical CDMA2000 performance
- Average output power = 2.0 W
- Gain = 16 dB
- Efficiency = 18%
- ACPR = –55 dBc
• Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 45%
• Integrated ESD protection: Human Body
Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
RF Characteristics, CDMA2000 Operation
CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 2 W, ƒ = 2680 MHz
Characteristic
Adjacent Channel Power Ratio
Gain
Symbol Min Typ
Max
Unit
ACPR
—
–55
—
dBc
G_ps
—
16
—
dB
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 10 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic
Gain
Intermodulation Distortion
Symbol Min Typ
G_ps
15.5
16
IMD
—
–31
Max
—
–28
Unit
dB
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 05, 2007-04-12