HYE18P16161AC Datasheet, PDF (24/33 Pages) Infineon Technologies AG – 16M Asynchronous/Page CellularRAM

HYE18P16161AC(-/L)70/85
16M Asynch/Page CellularRAM
Functional Description
A20-A0
CS1
UB, LB
t_WC
ADDRESS
t_AW
t_CW
t_AS
t_BW
t_WR
t_BPH
WE
DQx IN
DQx OUT
t_WP
t_WHZ
t_BLZ, t_LZ
t_DW
t_DH
Data In Valid
High-Z
Don't Care
(note) A20 is “don’t care” in 16M CellularRAM
Figure 14 Asynchronous Write - UB, LB Controlled (OE = V_IH or V_IL, ZZ = V_IH)
The programming of control register in asynchronous mode is performed in the similar manner as asynchronous
write except ZZ being held low during the operation. Note that ZZ has to meet set-up time (t_ZZWE) and hold time
(t_WEZZ)of valid state (= Low) in reference to WE falling and rising edge, respectively. CS1 should toggle at the end
of the operation to get ready for following access.
A20-A0
CS1
t_WC
RCR OPCODE
t_AW
t_WR
t_CW
UB, LB
WE
ZZ
DQx IN
t_CDZZ
t_AS
t_ZZWE
t_WP
High-Z
t_{W PH}
t_{W E ZZ}
DQx OUT
Don't Care
High-Z
(note) A20 is “don’t care” in 16M CellularRAM
Figure 15 Asynchronous Write to Control Register (OE = V_IH or V_IL)
Data Sheet
24
V2.0, 2003-12-16