BFP640F_15 Datasheet, PDF (24/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640F
Electrical Characteristics
0.5
0.4
0.3
0.2
0.1
0
0.1 0.2 0.3 0.4 0.5
−0.1
−0.2
−0.3
−0.4
−0.5
1
1.5
2
0.03 to 6 GHz
1 1.5 2 3 4 5
6.0 5.0 _4.0
3.0
6.0
5.0
4.0
3.0
2.0
1.0
2.0
1.0
3
4
5
10
0.03 ^0.03
−10
−5
−4
−3
−2
−1.5
−1
6.0mA
25mA
Figure 5-17 Output Matching S₂₂ = f (f), V_CE = 3 V, I_C = 6 / 25 mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I_C = 25mA
I_C = 6.0mA
0.4
0.2
0
012345678
f [GHz]
Figure 5-18 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 6 / 25 mA, Z_S = Z_opt
9 10
Data Sheet
24
Revision 2.0, 2015-03-13