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BFP640F_15 Datasheet, PDF (13/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor | |||
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BFP640F
Electrical Characteristics
Table 5-3 AC Characteristics, VCE = 3 V, f = 0.45 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Gms
â
|S21|2
â
NFmin
â
Gass
â
OP1dB
â
OIP3 â
33
â
31
â
0.55 â
26
â
10.5 â
23.5 â
Unit Note / Test Condition
dB
dB
dBm
IC = 25 mA
IC = 25 mA
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 â¦
IC = 25 mA
IC = 25 mA
Table 5-4 AC Characteristics, VCE = 3 V, f = 0.9 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Gms
â
|S21|2
â
NFmin
â
Gass
â
OP1dB
â
OIP3 â
Values
Typ. Max.
28.5 â
26.5 â
0.55 â
23.5 â
12.5 â
26
â
Unit Note / Test Condition
dB
dB
dBm
IC = 25 mA
IC = 25 mA
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 â¦
IC = 25 mA
IC = 25 mA
Table 5-5 AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Gms
â
|S21|2
â
NFmin
â
Gass
â
OP1dB
â
OIP3 â
Values
Typ. Max.
25
â
22.5 â
0.6 â
20.5 â
12
â
26
â
Unit Note / Test Condition
dB
dB
dBm
IC = 25 mA
IC = 25 mA
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 â¦
IC = 25 mA
IC = 25 mA
Data Sheet
13
Revision 2.0, 2015-03-13
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