BFP640F_15 Datasheet, PDF (10/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

4
Thermal Characteristics
BFP640F
Thermal Characteristics
Table 4-1 Thermal Resistance
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Junction - soldering point¹⁾
R_thJS
–
–
290
K/W –
1) For the definition of R_thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
240
200
160
120
80
40
0
0
25
50
75
100
125
150
T_S [°C]
Figure 4-1 Total Power Dissipation P_tot = f (T_S)
Data Sheet
10
Revision 2.0, 2015-03-13