BFP640F_15 Datasheet, PDF (15/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640F
Electrical Characteristics
Table 5-9 AC Characteristics, V_CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
Values
Typ. Max.
12.5 –
11.5 –
1.0 –
11
–
12.5 –
27.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 25 mA
I_C = 25 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
15
Revision 2.0, 2015-03-13