BFP640F_15 Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640F
Electrical Characteristics
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V_CE [V]
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 2.4 GHz
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V_CE [V]
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 2.4 GHz
Data Sheet
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Revision 2.0, 2015-03-13