HYS72D16500GR Datasheet, PDF (18/29 Pages) Infineon Technologies AG – Low Profile DDR SDRAM-Modules

HYS72D[16500/32501]GR-[7/8]-A
Low Profile Registered DDR SDRAM-Modules
Electrical Characteristics
Table 10 I_DD Specifications and Conditions
Unit
Note ¹⁾²⁾
128MB
128MB
256MB
256MB
x72
x72
x72
x72
1 rank
1 rank
1 rank
1 rank
–7
–8
–7
–8
Symbol
max.
max.
max.
max.
I_DD0
810
765
1620
1530
mA
3)
I_DD1
990
900
1980
1800
mA
3)4)
I_DD2P
45,0
40,5
90,0
81,0
mA
5)
I_DD2F
405
315
810
630
mA
5)
I_DD2Q
405
315
810
630
mA
5)
I_DD3P
135
135
270
270
mA
5)
I_DD3N
405
315
810
630
mA
5)
I_DD4R
990
810
1980
1620
mA
3)4)
I_DD4W
990
855
1980
1710
mA
3)
I_DD5
1710
1620
3420
3240
mA
3)
I_DD6
22,5
22,5
45
45
mA
5)
I_DD7
2520
2430
5040
4860
mA
3)4)
1) Module I_DD values are calculated on the basis of component I_DD and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the I_DDx values of the component data sheet as follows:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
4) DQ I/O (I_DDQ) currents are not included in the calculations (see note 1)
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
18
Rev. 1.2, 2004-06
10292003-DNYO-BD9L