HYS72D16500GR Datasheet, PDF (16/29 Pages) Infineon Technologies AG – Low Profile DDR SDRAM-Modules

HYS72D[16500/32501]GR-[7/8]-A
Low Profile Registered DDR SDRAM-Modules
Electrical Characteristics
Table 8 Electrical Characteristics and DC Operating Conditions (cont’d)
Parameter
Symbol
Values
Unit Note/Test Condition ¹⁾
Min.
Typ.
Max.
Output Leakage Current I_OZ
–5
Output High Current,
I_OH
—
Normal Strength Driver
5
–16.2
µA DQs are disabled;
0 V ≤ V_OUT ≤ V_DDQ ⁷⁾
mA V_OUT = 1.95 V ⁷⁾
Output Low
I_OL
Current, Normal Strength
Driver
16.2
—
mA V_OUT = 0.35 V ⁷⁾
1) 0 °C ≤ T_A ≤ 70 °C
2) Under all conditions, V_DDQ must be less than or equal to V_DD.
3) Peak to peak AC noise on V_REF may not exceed ± 2% V_{REF (DC)}. V_REF is also expected to track noise variations in V_DDQ.
4) V_TT is not applied directly to the device. V_TT is a system supply for signal termination resistors, is expected to be set equal
to V_REF, and must track variations in the DC level of V_REF.
5) V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
6) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
7) Inputs are not recognized as valid until V_REF stabilizes.
8) Values are shown per component
Data Sheet
16
Rev. 1.2, 2004-06
10292003-DNYO-BD9L