HYS64D128021 Datasheet, PDF (18/23 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

HYS64D128021[H/G]BDL–[5/6]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) degrades accordingly.
10) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/
ns, measured between V_OH(ac) and V_OL(ac).
11) For each of the terms, if not already an integer, round to the next highest integer. t_CK is equal to the actual system clock
cycle time.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Data Sheet
18
Rev. 0.5, 2003-12