HYS64D128021 Datasheet, PDF (15/23 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

HYS64D128021[H/G]BDL–[5/6]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 9 I_DD Specification for HYS64D128021[H/G]BDL–[5/6]–B
Unit
Note ¹⁾²⁾
1 GB
1 GB
×64
×64
2 Ranks
2 Ranks
–5
–6
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
typ.
1136
1256
48
480
304
192
672
1296
1336
2296
tbd
3096
max.
1360
1520
80
576
416
256
800
1560
1600
2760
tbd
3680
typ.
1016
1136
48
400
272
176
592
1136
1176
2056
tbd
2776
max.
1232
1352
64
480
384
240
704
1352
1392
2472
tbd
3272
mA
3)
mA
3)4)
mA
5)
mA
5)
mA
5)
mA
5)
mA
5)
mA
3)4)
mA
3)
mA
3)
mA
5)
mA
3)4)
1) Module I_DD values are calculated on the basis of component I_DD and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the I_DDx values of the component data sheet as follows:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included in the calculations
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
15
Rev. 0.5, 2003-12