BFP720F Datasheet, PDF (18/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

BFP720F
Electrical Characteristics
Table 15 AC Characteristics, V_CE = 3 V, f = 10 GHz (cont’d)
Parameter
Symbol
Values
Min. Typ. Max.
High Linearity Operation Point
Minimum Noise Figure
S₂₁
–
10.5 –
Minimum Noise Figure
Associated Gain
Linearity
NF_min
–
G_ass
–
1.0
–
10.5 –
1 dB Gain Compression Point
3rd Order Intercept Point
OP_1dB
–
OIP₃
–
8
–
19.5 –
Unit Note / Test Condition
dB
dBm
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Note:
1. G_ms = IS₂₁ / S1₂I for k < 1; G_ma = IS₂₁ / S₁₂I(k-(k²-1)^1/2) for k > 1
2. In order to get the NF_min values stated in this chapter the test fixture losses have been subtracted from all
measured results
Data Sheet
18
Revision 1.0, 2009-03-13