BFP720F Datasheet, PDF (16/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

BFP720F
Electrical Characteristics
Table 10 AC Characteristics, V_CE = 3 V, f = 1.5 GHz (cont’d)
Parameter
Symbol
Values
Min. Typ. Max.
Associated Gain
Linearity
G_ass
–
24
–
1 dB Gain Compression Point
3rd Order Intercept Point
OP_1dB
–
OIP₃
–
6
–
21
–
Unit Note / Test Condition
dBm
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Table 11 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
G_ms
–
G_ms
–
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
S₂₁
–
S₂₁
–
Minimum Noise Figure
Associated Gain
Linearity
NF_min
–
G_ass
–
1 dB Gain Compression Point
3rd Order Intercept Point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
23
–
26.5 –
21
–
24.5 –
0.5
–
23
–
6.5
–
21
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Table 12 AC Characteristics, V_CE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
G_ms
–
G_ms
–
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
S₂₁
–
S₂₁
–
Minimum Noise Figure
Associated Gain
Linearity
NF_min
–
G_ass
–
1 dB Gain Compression Point
3rd Order Intercept Point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
22
–
25.5 –
20.5 –
23
–
0.55 –
22
–
6
–
21
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Data Sheet
16
Revision 1.0, 2009-03-13