BFP720F Datasheet, PDF (14/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

BFP720F
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a testfixture with Bias T’s in a 50 Ω system, T_A = 25 °C
VC
Top View
Bias -T
E
C
OUT
VB
Bias-T
IN
B
E
(Pin 1)
Figure 4 BFP720F Testing Circuit
Table 7 AC Characteristics, V_CE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
G_ms
–
G_ms
–
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
S₂₁
–
S₂₁
–
Minimum Noise Figure
Associated Gain
Linearity
NF_min
–
G_ass
–
1 dB Gain Compression Point
3rd Order Intercept Point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
34
–
37.5 –
23
–
29
–
0.4
–
28
–
6
–
22.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Table 8 AC Characteristics, V_CE = 3 V, f = 450 MHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
G_ms
–
G_ms
–
Values
Typ. Max.
29
–
32.5 –
Data Sheet
14
Unit Note / Test Condition
dB
I_C = 5 mA
I_C = 13 mA
Revision 1.0, 2009-03-13