BFP720F Datasheet, PDF (13/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

5
Electrical Characteristics
BFP720F
Electrical Characteristics
5.1
DC Characteristics
Table 5 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Collector-emitter breakdown voltage
Collector-emitter cutoff current
Collector-base cutoff current
Emitter-base cutoff current
DC current gain
V_(BR)CEO
I_CES
I_CBO
I_EBO
h_FE
Min.
4
–
–
–
160
5.2
General AC Characteristics
Values
Typ. Max.
4.7
–
–
30
–
100
–
2
250 400
Unit Note / Test Condition
V
I_C = 1 mA, I_B = 0
μA V_CE = 13 V, V_BE = 0 V
nA V_CB = 5 V, I_E = 0
μA V_EB = 0.5 V, I_C = 0
I_C = 13 mA, V_CE = 3 V
pulse measured
Table 6 AC Characteristics at T_A = 25 °C
Parameter
Symbol
Transition frequency
f_T
Min.
–
Collector-base capacitance
C_cb
–
Collector-emitter capacitance
C_ce
–
Emitter-base capacitance
C_eb
–
Values
Typ. Max.
45
–
0.06 –
0.3
–
0.3
–
Unit Note / Test Condition
GHz
pF
pF
pF
I_C = 13 mA, V_CE = 3 V
f = 1 GHz
V_CB = 3 V, V_BE = 0 V
f = 1 MHz
emitter grounded
V_CE = 3 V, V_BE = 0 V
f = 1 MHz
base grounded
V_EB = 0.5 V, V_CB = 0 V
f = 1 MHz
collector grounded
Data Sheet
13
Revision 1.0, 2009-03-13