BFP720F Datasheet, PDF (17/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

BFP720F
Electrical Characteristics
Table 13 AC Characteristics, V_CE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
G_ms
–
G_ms
–
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
S₂₁
–
S₂₁
–
Minimum Noise Figure
Associated Gain
Linearity
NF_min
–
G_ass
–
1 dB Gain Compression Point
3rd Order Intercept Point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
20.5 –
23.5 –
18
–
20.5 –
0.6
–
19.5 –
6.5
–
21.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Table 14 AC Characteristics, V_CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
G_ms
–
G_ms
–
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
S₂₁
–
S₂₁
–
Minimum Noise Figure
Associated Gain
Linearity
NF_min
–
G_ass
–
1 dB Gain Compression Point
3rd Order Intercept Point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
19
–
21.5 –
15
–
16.5 –
0.7
–
15
–
7
–
21
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Table 15 AC Characteristics, V_CE = 3 V, f = 10 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
G_ma
–
G_ma
–
Low Noise Operation Point
S₂₁
–
Values
Typ. Max.
14
–
15
–
9.5
–
Data Sheet
17
Unit Note / Test Condition
dB
I_C = 5 mA
I_C = 13 mA
dB
Z_S = Z_L = 50 Ω
I_C = 5 mA
Revision 1.0, 2009-03-13