SLB9660 Datasheet, PDF (14/22 Pages) Infineon Technologies AG – Trusted Platform Module

SLB 9660 TPM1.2
Trusted Platform Module
Electrical Characteristics
5.3
DC Characteristics
T_A = 25°C, V_DD = 3.3V ± 0.3V unless otherwise noted
Table 5-3 Current Consumption
Parameter
Symbol
Current Consumption in I_{VDD_Active}
Active Mode
Values
Min. Typ. Max.
2.5 25
Current Consumption in I_{VDD_Sleep}
0.9
Sleep Mode
Current Consumption in I_{VDD_Sleep_CS}
150
Sleep Mode with
Stopped Clock
Unit Note or Test Condition
mA Assuming operating state S0,
that means active. Note that
since the device is mostly in an
internal sleep state in a “typical”
application, the typical average
current consumption is far less
than the maximum value. It is
assumed that in a normal
environment, the device is in an
internal sleep state for
approximately 90% of the
operating time of the platform.
mA Pins LRESET#, LFRAME#, LADn,
SERIRQ = V_DD.
Assuming operating state S0 with
active clock. No ongoing internal
TPM operation. The device is in
an internal sleep state.
µA Pins LRESET#, LFRAME#, LADn,
SERIRQ = V_DD and LCLK = GND.
Assuming operating state S3 with
clock stopped. Obviously, this
value is zero if the TPM is not
powered in S3 state (this is
platform dependent).
Note: Current consumption does not include any currents flowing through resistive loads on output pins! For
the definition of power/operating states, please refer to the ACPI standard.
Note: Device sleep mode will be entered after 30 seconds of inactivity after the last TPM command was
executed.
Table 5-4 DC Characteristics for non-LPC Pins
Parameter
Symbol
Values
Unit
Min. Typ. Max.
Input voltage high
V_IH
Input voltage low
V_IL
Input high leakage
I_IH
current
0.7 V_DD
0
-15
V_DD
V
0.3 V_DD V
15
µA
Note or Test Condition
GPIO and PP pins
GPIO and PP pins
V_IN = V_DD, GPIO and PP pins
Data Sheet
14
Revision 1.0 2014-12-12