Q67060-S6136 Datasheet, PDF (13/18 Pages) Infineon Technologies AG – Addendum for PCN-Datasheet 2004-018-A

Reverse battery protection
OUT1...OUT4
- V _bb
IN ^{R I}
IS
L o g ic
V _Z2
OUT
VZ1
PROFET
R _IS
R _GND
-I _GND
R _Load
Signal GND
Load GND
V_Z1 = 6,1V typ., V_Z2 = 47V typ., R_GND = 150Ω
R_IS = 1kΩ, R_I = 3,5kΩ typ.
In case of reverse battery the load current has to
be limited by the load. Protection functions are
not active.
Open load detection, OUT1...OUT4
Off-state diagnostic condition:
Open load, if V_OUT > 3 V typ.; IN = low
OFF
Logic
unit
Open load
d e tec tio n
Vbb
RE _XT
VOUT
S ignal G ND
GND disconnect
Vbb VIN VIS
IN
Vbb
PROFET OUT
IS
GND
VGND
Any kind of load.
PCN 2004-018-A: BTS 5440G
Vbb disconnect with energized inductive
load
high
IN
Vbb
PROFET OUT
IS
GND
Vbb
For inductive load currents up to the limits defined
by Z_L each switch is protected against loss of Vbb.
(max. ratings and diagram on page 12)
Consider at your PCB layout that in the case of Vbb
disconnection with energized inductive load all the
load current flows through the GND connection.
Inductive load switch-off energy
dissipation
E _bb
=
E _AS
IN
Vbb
PROFET OUT
L
IS
GND
{^ZL
RL
ELoad
EL
ER
Energy stored in load inductance: E_L = ½ * L * I_L2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
E_AS = E_bb + E_L - E_R = V_ON(CL) * i_L(t) dt,
with an approximate solution for R_L > 0Ω:
IL * L
IL * RL
EAS =
* (Vbb +|VOUT (CL)| ) * ln(1 +
)
2 * RL
|VOUT (CL)|
Page 12
2004-Mar-08