1EDI10I12MH Datasheet, PDF (12/18 Pages) Infineon Technologies AG – Single channel IGBT gate driver IC with clamp in wide body package

EiceDRIVER^™ 1EDI Compact
Single channel IGBT gate driver IC with clamp in wide body package
Electrical Parameters
Table 5 Logic Input
Parameter
IN+,IN- low input voltage
IN+,IN- high input voltage
IN+,IN- low input voltage
IN+,IN- high input voltage
IN- input current
IN+ input current
Symbol
V_IN+L,
V_IN-L
V_IN+H,
V_IN-H
V_IN+L,
V_IN-L
V_IN+H,
V_IN-H
I_IN-
Min.
–
0.7 ×
V_VCC1
–
3.5
–
I_IN+
–
Values
Typ.
–
–
Max.
0.3 ×
V_VCC1
–
–
1.5
–
–
70
200
70
200
Unit Note or Test
Condition
11)_{3.1 V ≤ VVCC1 ≤ 17 V}
V
V_VCC1 = 5.0 V
V
μA
V_VCC1 = 5.0 V, V_IN- =
GND1
μA
V_VCC1 = 5.0 V, V_IN+ =
V_VCC1
4.3.3
Gate Driver
Note:
minimum Peak current rating valid over temperature range!
Table 6 Gate Driver
Parameter
High level output peak current
(source)
1EDI10I12MH
1EDI20I12MH
1EDI30I12MH
Low level output peak current
1EDI10I12MH
1EDI20I12MH
1EDI30I12MH
Symbol
I_OUT,H,PEAK
Min.
1.0
2.0
3.0
I_OUT,L,PEAK
1.0
2.0
3.0
Values
Typ.
Max.
–
1.9
3.5
5.2
–
1.7
3.2
4.5
Unit Note or Test
Condition
A
12)
IN+ = High,
IN- = Low,
V_VCC2 = 15 V
A
12)
IN+ = Low,
IN- = Low,
V_VCC2 = 15 V
11 _{Parameter is not subject to production test - verified by design/characterization}
12 _{specified min. output current is forced; voltage across the device V(VCC2 - OUT) or V(OUT - GND2) < VVCC2.}
Datasheet
12
Rev. 2.0
2016-07-05