1EDI10I12MH Datasheet, PDF (10/18 Pages) Infineon Technologies AG – Single channel IGBT gate driver IC with clamp in wide body package

EiceDRIVER^™ 1EDI Compact
Single channel IGBT gate driver IC with clamp in wide body package
Electrical Parameters
4.2
Note:
Operating Parameters
Within the operating range the IC operates as described in the functional description. Unless
otherwise noted all parameters refer to GND1.
Table 3 Operating Parameters
Parameter
Power supply output side
Power supply input side
Logic input voltages (IN+,IN-)
Pin CLAMP voltage
Switching frequency
Ambient temperature
Thermal coefficient, junction-top
Common mode transient immunity
Symbol
V_VCC2
V_VCC1
V_LogicIN
V_CLAMP
f_sw
T_A
Ψ_th,jt
|dV_ISO/dt|
Values
Min.
Max.
13
18
3.1
17
-0.3
17
V_GND2-0.3 V_VCC2⁷⁾
–
1.0
-40
125
–
4.8
–
100
Unit Note or
Test Condition
V
V
V
V
MHz
°C
K/W
kV/μs
6)
–
–
6)
8)9)
–
9)_{@TA = 85°C}
9) _{@ 1000 V}
4.3
Electrical Characteristics
Note:
The electrical characteristics include the spread of values in supply voltages, load and junction
temperatures given below. Typical values represent the median values at T_A = 25°C. Unless otherwise
noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 6
to 8).
4.3.1
Voltage Supply
Table 4 Voltage Supply
Parameter
UVLO threshold input chip
UVLO hysteresis input chip
(V_UVLOH1 - V_UVLOL1)
Symbol
V_UVLOH1
V_UVLOL1
V_HYS1
Min.
–
2.55
0.09
Values
Typ.
2.85
2.75
0.10
Max.
3.1
–
–
Unit Note or Test
Condition
V
–
V
–
V
–
6 _{With respect to GND2.}
7 _{May be exceeded during short circuit clamping.}
8 _{do not exceed max. power dissipation}
9 _{Parameter is not subject to production test - verified by design/characterization}
Datasheet
10
Rev. 2.0
2016-07-05