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ICS9DB403D Datasheet, PDF (5/19 Pages) Integrated Device Technology – Four Output Differential Buffer for PCIe Gen 1 and Gen 2
ICS9DB403D
Four Output Differential Buffer for PCIe for Gen 1 and Gen 2
Absolute Max
Symbol
VDD_A
VDD_In
VIL
VIH
Ts
Tambient
Tcase
ESD prot
Parameter
3.3V Core Supply Voltage
3.3V Logic Supply Voltage
Input Low Voltage
Input High Voltage
Storage Temperature
Commerical Operating Range
Industrial Operating Range
Case Temperature
Input ESD protection
human body model
Min
GND-0.5
-65
0
-40
2000
Max
4.6
4.6
VDD+0.5V
150
70
85
115
Units
V
V
V
V
°C
°C
°C
°C
V
Electrical Characteristics - Clock Input Parameters
TA = Tambient for the desired operating range, Supply Voltage VDD = 3.3 V +/-5%
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
Input High Voltage -
DIF_IN
Input Low Voltage -
DIF_IN
Input Common Mode
Voltage - DIF_IN
VIHDIF
VILDIF
VCOM
Differential inputs
(single-ended measurement)
Differential inputs
(single-ended measurement)
Common Mode Input Voltage
600
800
VSS - 300
0
300
Input Amplitude - DIF_IN VSWING
Peak to Peak value
300
Input Slew Rate - DIF_IN dv/dt
Measured differentially
0.4
Input Leakage Current
IIN
VIN = VDD , VIN = GND
-5
Input Duty Cycle
dtin
Measurement from differential wavefrom
45
Input Jitter - Cycle to
Cycle
JDIFIn
Differential Measurement
0
1 Guaranteed by design and characterization, not 100% tested in production.
2Slew rate measured through Vswing min centered around differential zero
MAX
1150
UNITS NOTES
mV
1
300
mV
1
1000
mV
1
1450
mV
1
8
V/ns 1,2
5
uA
1
55
%
1
125
ps
1
IDTTM/ICSTM Four Output Differential Buffer for PCIe Gen 1 and Gen 2
5
ICS9DB403D REV L 10/07/09