84427 Datasheet, PDF (3/16 Pages) Integrated Device Technology – Crystal-to-LVDS Integrated Frequency Synthesizer/Fanout Buffer

84427 DATA SHEET
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V_DD
Inputs, V_I
Outputs, I_O
Continuous Current
Surge Current
4.6V
-0.5V to V_DD + 0.5V
10mA
15mA
Package Thermal Impedance, θ_JA 50°C/W (0 lfpm)
Storage Temperature, T_STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device.These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions
beyond those listed in the DC Characteristics or AC Charac-
teristics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
TABLE
3A.
POWER
SUPPLY
DC
CHARACTERISTICS,
V
DD
=
V
DDA
=
3.3V±5%,
TA
=
0°C
TO
70°C
Symbol Parameter
Test Conditions
Minimum
V_DD
Core Supply Voltage
V_DDA
Analog Supply Voltage
I_DD
Power Supply Current
I_DDA
Analog Supply Current
3.135
V_DD – 0.72
Typical
3.3
3.3
Maximum
3.465
V_DD
300
30
Units
V
V
mA
mA
TABLE 3B. LVCMOS / LVTTL DC CHARACTERISTICS, V_DD = V_DDA = 3.3V±5%, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum Typical
V_IH
Input High Voltage
2
V_IL
Input Low Voltage
-0.3
MR, F_SEL1
V_DD = V_IN = 3.465V
I_IH
Input High Current _{PLL_SEL,}
F_SEL0, F_SEL2
V_DD = V_IN = 3.465V
MR, F_SEL1
V_DD = 3.465V, V_IN = 0V
-5
I_IL
Input Low Current _{PLL_SEL,}
F_SEL0, F_SEL2
V_DD = 3.465V, V_IN = 0V
-150
Maximum
V_DD + 0.3
0.8
150
5
Units
V
V
µA
µA
µA
µA
TABLE 3C. LVDS DC CHARACTERISTICS, V_DD = V_DDA = 3.3V±5%, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum
V_OD
Differential Output Voltage
375
Δ V_OD
V_OD Magnitude Change
V_OS
Offset Voltage
1.3
Δ V_OS
V_OS Magnitude Change
Typical
475
1.45
Maximum
575
50
1.6
50
Units
mV
mV
V
mV
REVISION B 5/6/15
3
CRYSTAL-TO-LVDS
INTEGRATED FREQUENCY SYNTHESIZER/FANOUT BUFFER