IC61SF12832 Datasheet, PDF (7/17 Pages) Integrated Circuit Solution Inc – 128K x 32 Flow Through SyncBurst SRAM

IC61SF12832
IC61SF12836
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND)
0,0
A1’, A0’ = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
TBIAS
Temperature Under Bias
TSTG
Storage Temperature
PD
Power Dissipation
IOUT
Output Current (per I/O)
VIN, VOUT Voltage Relative to GND for I/O Pins
VIN
Voltage Relative to GND for
for Address and Control Inputs
-40 to +85
o_C
-55 to +150
o_C
1.6
W
100
mA
-0.5 to VCCQ + 0.3 V
-0.5 to VCC + 0.5 V
VCC
Voltage on Vcc Supply Relatiive to GND
-0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static
voltages or electric fields; however, precautions may be taken to avoid application of any
voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Circuit Solution Inc.
7
SSR018-0A 09/17/2001