IC42S16100 Datasheet, PDF (5/78 Pages) Integrated Circuit Solution Inc – 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IC42S16100
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameters
Rating
Unit
VCC MAX
Maximum Supply Voltage
–1.0 to +4.6
V
VCCQ MAX
Maximum Supply Voltage for Output Buffer
–1.0 to +4.6
V
VIN
Input Voltage
–1.0 to +4.6
V
VOUT
Output Voltage
–1.0 to +4.6
V
PD MAX
Allowable Power Dissipation
1
W
ICS
Output Shorted Current
50
mA
TOPR
Operating Temperature
0 to +70
°C
TSTG
Storage Temperature
–55 to +150
°C
DC RECOMMENDED OPERATING CONDITIONS⁽²⁾ (At TA = 0 to +70°C)
Symbol
VCC, VCCQ
VIH
VIL
Parameter
Supply Voltage
Input High Voltage⁽³⁾
Input Low Voltage⁽⁴⁾
Min.
3.0
2.0
-0.3
Typ.
Max.
Unit
3.3
3.6
V
—
VDD + 0.3
V
—
+0.8
V
CAPACITANCE CHARACTERISTICS^(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol Parameter
Typ. Max. Unit
CIN1
CIN2
CI/O
Input Capacitance: A0-A11
—
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
—
Data Input/Output Capacitance: I/O0-I/O15
—
4
pF
4
pF
5
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. All voltages are referenced to GND.
3. VIH (max) = VCCQ + 2.0V with a pulse width ≤ 3 ns.
4. VIL (min) = GND – 2.0V with a pulse < 3 ns and -1.5V with a pulse < 5ns.
Integrated Circuit Solution Inc.
5
DR024-0D 06/25/2004