IC-MA3 Datasheet, PDF (7/19 Pages) IC-Haus GmbH – ANGULAR HALL SENSOR

iC-MA3 ANGULAR HALL SENSOR
WITH SIN/COS OUTPUT, CASCADABLE
Rev A2, Page 7/19
ELECTRICAL CHARACTERISTICS
Operating conditions: VDD = 3.0 V...5.5 V, Tj = -40...125 °C, 4 mm NdFeB magnet, unless otherwise noted.
Item Symbol Parameter
No.
Conditions
Min.
Mode Control Inputs, tri-level: M0, M1, PSEL, ASEL, FSEL
301 Vt()hi
Threshold Voltage hi
70
302 Vt()lo
Threshold Voltage lo
20
303 V0()
Pin-Open Voltage
40
304 Ri()pu, pd Internal Pull-Up/Down Resistors
305 t()filter
Input Debouncing Time at
PSEL, ASEL, FSEL
Mode Control Inputs, digital: NEN, NTM
401 Vt()hi
Threshold Voltage hi
402 Vt()lo
Threshold Voltage lo
0.8
403 Vt()hys Threshold Voltage Hysteresis Vt()hys = Vt()hi - Vt()lo
100
404 Ipu()
Pull-Up Current
V() = 0 V ... VDD - 1 V;
VDD = 3.3 V ±10%
-25
VDD = 5.0 V ±10%
-62
Signal Ports: P0, P1, P2, P3
501 Vref
Signal Reference Voltage
M0 = lo, M1 = lo, measured at port P0
45
502 Vout()pk Sin/Cos Signal Amplitude
ASEL = VDD
ASEL = GND
ASEL = open
503 I()max
Permissible Load Current
-0.5
Signal Ports: P0 (input CLK) and P3 (output NENO) during chain operation (M1 = lo)
601 Vt()hi
Threshold Voltage hi at P0
602 Vt()lo
Threshold Voltage lo at P0
0.8
603 Vt()hys Threshold Volt. Hysteresis at P0 Vt()hys = Vt()hi - Vt()lo
100
604 Ipd()
Pull-Down Current at P0
V() = 1 V ... VDD;
VDD = 3.3 V ±10%
4
VDD = 5.0 V ±10%
7
605 Vs()hi
Saturation Voltage hi at P3
Vs()hi = VDD - V(), I() = -4 mA;
VDD = 3.3 V ±10%
130
VDD = 5.0 V ±10%
100
606 Vs()lo
Saturation Voltage lo at P3
I() = 4 mA;
VDD = 3.3 V ±10%
80
VDD = 5.0 V ±10%
60
607 tr()
Rise Time at P3
CL() = 30 pF
608 tf()
Fall Time at P3
CL() = 30 pF
Error Port: NERR
701 Vs()lo
Saturation Voltage lo
I() = 4 mA;
VDD = 3.3 V ±10%
80
VDD = 5.0 V ±10%
60
702 Ipu()
Pull-Up Current
V() = 0 ... VDD - 1 V;
VDD = 3.3 V ±10%
-25
VDD = 5.0 V ±10%
-62
703 tf()
Fall Time
CL() = 30 pF
Step-Up Converter: VDDS
801 VDDS
Step-Up Voltage Output
no load permissible
5
802 C(VDDS) Recommended Backup Capacitor M1 = lo
M1 = hi (chain operation)
Typ.
200
8
-12
-28
50
1000
500
250
12
28
-12
-28
1
Unit
Max.
80 %VDD
30 %VDD
60 %VDD
kΩ
µs
2.0
V
V
440 mV
-4
µA
-7
µA
55 %VDD
mV
mV
mV
0.5 mA
2.0
V
V
440 mV
40
µA
103 µA
420 mV
320 mV
400 mV
300 mV
20
ns
20
ns
400 mV
300 mV
-4
µA
-7
µA
20
ns
V
100 nF
1
nF