IC-HT_15 Datasheet, PDF (6/45 Pages) IC-Haus GmbH – DUAL CW LASER DIODE DRIVER

iC-HT
DUAL CW LASER DIODE DRIVER
preliminary
Rev B1, Page 6/45
ELECTRICAL CHARACTERISTICS
Operating Conditions: VB = 2.8 . . . 11 V (referenced to GND), Tj = -40 . . . 125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
Total Device
Functionality and parameters beyond the operating conditions (with reference to independent voltage supplies, for instance) are to be
verified within the individual application using FMEA methods.
001 VB
002 I(VB)
Permissible Supply Voltage
Standby Current at VB
Referenced to GND
V(NSTBY) ≤ 0.4 V
2.8
11
V
10
µA
003 I(VB)
Supply Current at VB
No load, EC1, EC2, NSTBY = hi
004 V(VB)on Turn-on threshold
Increasing VB
005 V(VB)off Turn-off threshold
Decreasing VB
006 V(VB)Hys Power-on hysteresis
007 V(VDD)on Turn-on threshold
Increasing VDD
008 V(VDD)off Turn-off threshold
Decreasing VDD
009 V(VDD)Hys Power-on hysteresis
010 V(VB)INITR RAM memory reset during
Stand-By
NSTBY = lo
011 Rgnd() Resistor to GND at MRL1, MRL2
012 Ragnd() Resistor to AGNDx at CILx
013 Vc()lo
Clamp Voltage lo at VB,
VDD, NCHK, EMC, NCS/A1,
MISO/SDA, MOSI/A0,
SCLK/SCL, INS/WKR, NSTBY,
EC1, EC2, DCO, LDK1, LDK2,
CI1, CIL1, CI2, CIL2, AGND1,
AGND2, MDA1, MDA2
I() = -10 mA
Laser Driver LDKx, CIx, MDAx
101 Vs(LDK)lo Saturation Voltage lo at LDK
I(LDKx) = 750 mA
102 V(LDKSAT) LDKx saturation detection
threshold
RLDKSx = 00
RLDKSx = 01
RLDKSx = 10
RLDKSx = 11
103 Idc(LDK) Permissible DC Current at LDKx
104 Ileak(LDK) LDKx leakage current
V(LDKx) = 11 V
105 C(CI)
Possible capacitor at CI1, CI2 ECIE = 0, EMC = hi
106 I(CI)
Charge Current at CI1, CI2
V(CI) = 0 V, EC1, EC2 = hi, ECIEx = 1
COMP = 111
107 I(LDK)max Laser overcurrent shutdown
threshold
V(LDKx) = 0.7 V . . . VB - 1.5 V
ILIMx(7:0) = 0x00, RACCx = 0
ILIMx(7:0) = 0xFF, RACCx = 0
ILIMx(7:0) = 0x00, RACCx = 1
ILIMx(7:0) = 0xFF, RACCx = 1
108 ∆ I(LDK) Shutdown threshold resolution RACCx = 0
RACCx = 1
109 tovc
Time to overcurrent shutdown Laser current decreased 10%
110 V(MDA) Voltage at MDA1, MDA2
Closed control loop
EC1, EC2 = hi
EMC = lo, INS/WKR = lo
EMC = lo, INS/WKR = hi
111 Ten
Time to laser enabled
NSTBY lo → hi, no load at VDD,
V(VDD) 0 to 90 %,
CVDD = 1 µF, EMC = lo
112 Tci
Time to light
NSTBY = hi, ECIE = 0, COMP = 010,
light off to 80 % target value
113 Tcio
Time to target light
Light from 80 % to 99 % target value
5
mA
1.7
2.7
V
1.6
2.6
V
20
250 mV
1.7
2.4
V
1.6
2.3
V
20
250 mV
0.85
1.4
V
20
Ω
20
Ω
-1.6
-0.3
V
0.7
V
0.35 0.5 0.65
V
0.55 0.7 0.85
V
0.85
1
1.15
V
1.05 1.2 1.35
V
750 mA
10
µA
0
µF
-220
-30
µA
0
25
mA
750
1400 mA
0
3.2 mA
80
175 mA
2.8
4
5.2 mA
0.3 0.5 0.8 mA
1
5
µs
225 250 275 mV
455 500 545 mV
1.3
ms
300
µs
4700 µs