HYMD216646D6-K Datasheet, PDF (9/30 Pages) Hynix Semiconductor – 1184pin Unbuffered DDR SDRAM DIMMs

1184pin Unbuffered DDR SDRAM DIMMs
ABSOLUTE MAXIMUM RATINGS¹
Parameter
Operating Temperature (Ambient)
Storage Temperature
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Voltage on inputs relative to Vss
Voltage on I/O pins relative to Vss
Output Short Circuit Current
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VDD
VDDQ
VINPUT
VIO
IOS
TSOLDER
Rating
0 ~ 70
-55 ~ 150
-1.0 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-0.5 ~3.6
50
260 ⋅ 10
Note:
1. Operation at above absolute maximum rating can adversely affect device reliability
Unit
o_C
o_C
V
V
V
V
mA
o_{C ⋅ Sec}
DC OPERATING CONDITIONS (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Parameter
Power Supply Voltage (DDR 200, 266, 333)
Power Supply Voltage (DDR 400)
Power Supply Voltage (DDR 200, 266, 333)
Power Supply Voltage (DDR 400)
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input Leakage Current
Output Leakage Current
Normal Strength Output High Current
Output Driver
(min VDDQ, min VREF, min VTT)
(VOUT=VTT ± 0.84) Output Low Current
(min VDDQ, max VREF, max VTT)
Half Strength Out- Output High Current
put Driver
(min VDDQ, min VREF, min VTT)
(VOUT=VTT ± 0.68) _{Output Low Current}
(min VDDQ, max VREF, max VTT)
Symbol
VDD
VDD
VDDQ
VDDQ
VIH
VIL
VTT
VREF
VIN(DC)
VID(DC)
VI(RATIO)
ILI
ILO
IOH
IOL
IOH
IOL
Min
2.3
2.5
2.3
2.5
VREF + 0.15
-0.3
VREF - 0.04
0.49*VDDQ
-0.3
0.36
0.71
-2
-5
Typ
2.5
2.6
2.5
2.6
-
-
VREF
0.5*VDDQ
-
-
-
-
-
Max
2.7
2.7
2.7
2.7
VDDQ + 0.3
VREF - 0.15
VREF + 0.04
0.51*VDDQ
VDDQ+0.3
VDDQ+0.6
1.4
2
5
-16.8
-
-
16.8
-
-
-13.6
-
-
13.6
-
-
Unit
V
V
V
V
V
V
V
V
V
V
-
uA
uA
mA
mA
mA
mA
Note
2
1
1,2
3
4
5
6
7
8
Note:
1. VDDQ must not exceed the level of VDD.
2. For DDR400, VDD=2.6V ± 0.1V, VDDQ=2.6V ± 0.1V
3. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
4. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same. Peak to
peak noise on VREF may not exceed ± 2% of the DC value.
5. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
6. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-
ture and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum differ-
ence between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
7. VIN=0 to VDD, All other pins are not tested under VIN =0V.
8. DQs are disabled, VOUT=0 to VDDQ.
Rev. 1.2 / May. 2005
9