HYMD216646D6-K Datasheet, PDF (15/30 Pages) Hynix Semiconductor – 1184pin Unbuffered DDR SDRAM DIMMs

1184pin Unbuffered DDR SDRAM DIMMs
AC OPERATING CONDITIONS (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Min.
VREF + 0.31
-
0.7
0.5*VDDQ-0.2
Max
-
VREF - 0.31
VDDQ + 0.6
0.5*VDDQ+0.2
Unit
V
V
V
V
Note
1
2
Note:
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.
AC OPERATING TEST CONDITIONS (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Reference Voltage
Termination Voltage
AC Input High Level Voltage (VIH, min)
AC Input Low Level Voltage (VIL, max)
Input Timing Measurement Reference Level Voltage
Output Timing Measurement Reference Level Voltage
Input Signal maximum peak swing
Input minimum Signal Slew Rate
Termination Resistor (RT)
Series Resistor (RS)
Output Load Capacitance for Access Time Measurement (CL)
Value
VDDQ x 0.5
VDDQ x 0.5
VREF + 0.31
VREF - 0.31
VREF
VTT
1.5
1
50
25
30
Unit
V
V
V
V
V
V
V
V/ns
Ω
Ω
pF
OUTPUT LOAD CIRCUIT
Output
VTT
RT=50Ω
Zo=50Ω
CL=30pF
VREF
Rev. 1.2 / May. 2005
15