HY57V561620 Datasheet, PDF (9/13 Pages) Hynix Semiconductor – 4Banks x 4M x 16Bit Synchronous DRAM

IBIS SPECIFICATION
IOH Characteristics (Pull-up)
Voltage
(V)
3.45
3.3
3.0
2.6
2.4
2.0
1.8
1.65
1.5
1.4
1.0
0.0
100MHz
Min
I (mA)
0.0
-21.1
-34.1
-58.7
-67.3
-73.0
-77.9
-80.8
-88.6
-93.0
100MHz
Max
I (mA)
-2.4
-27.3
-74.1
-129.2
-153.3
-197.0
-226.2
-248.0
-269.7
-284.3
-344.5
-502.4
66MHz
Min
I (mA)
-0.7
-7.5
-13.3
-27.5
-35.5
-41.1
-47.9
-52.4
-72.5
-93.0
HY57V561620(L)T
66MHz and 100MHz Pull-up
0
0.5
1
1.5
2
2.5
3
3.5
0
-100
-200
-300
-400
-500
-600
Voltage (V)
Ioh Min (100MHz)
Ioh Min (66MHz)
Ioh Min (66 and 100MHz)
IOL Characteristics (Pull-down)
Voltage
(V)
0.0
0.4
0.65
0.85
1.0
1.4
1.5
1.65
1.8
1.95
3.0
3.45
100MHz
Min
I (mA)
0.0
27.5
41.8
51.6
58.0
70.7
72.9
75.4
77.0
77.6
80.3
81.4
100MHz
Max
I (mA)
0.0
70.2
107.5
133.8
151.2
187.7
194.4
202.5
208.6
212.0
219.6
222.6
66MHz
Min
I (mA)
0.0
17.7
26.9
33.3
37.6
46.6
48.0
49.5
50.7
51.5
54.2
54.9
** IBIS spec. is also applied to 133MHz device.
Revision 1.8 / Apr.01
66MHz and 100MHz Pull-down
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
3
3.5
Voltage (V)
I (mA) 100 min
I (mA) 66 min
I (mA) 100 max