HY57V561620 Datasheet, PDF (5/13 Pages) Hynix Semiconductor – 4Banks x 4M x 16Bit Synchronous DRAM

HY57V561620(L)T
CAPACITANCE (TA=25°C, f=1MHz)
Parameter
Pin
Symbol
Input capacitance
CLK
CI1
A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS,
CI2
WE, UDQM, LDQM
Data input / output capacitance DQ0 ~ DQ15
CI/O
-H
Min
Max
2.5
3.5
2.5
3.8
4.0
6.5
-8/P/S
Unit
Min
Max
2.5
4.0
pF
2.5
5.0
pF
4.0
6.5
pF
OUTPUT LOAD CIRCUIT
Output
Vtt=1.4V
RT=250 Ω
Output
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Parameter
Symbol
Min.
Max
Input leakage current
Output leakage current
Output high voltage
Output low voltage
ILI
ILO
VOH
VOL
-1
1
-1
1
2.4
-
-
0.4
Note :
1. VIN = 0 to 3.6V, All other pins are not under test = 0V
2. DOUT is disabled, VOUT=0 to 3.6V
Unit
Note
uA
1
uA
2
V
IOH = -4mA
V
IOL =+4mA
Revision 1.8 / Apr.01