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HY57V561620 Datasheet, PDF (4/13 Pages) Hynix Semiconductor – 4Banks x 4M x 16Bit Synchronous DRAM | |||
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ABSOLUTE MAXIMUM RATINGS
HY57V561620(L)T
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature â
Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 â
10
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=0 to 70°C)
Unit
°C
°C
V
V
mA
W
°C â
Sec
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD, VDDQ
VIH
VIL
Min
3.0
2.0
VSSQ-2.0
Typ.
Max
Unit
3.3
3.6
V
3.0
VDDQ + 0.3
V
0
0.8
V
Note :
1. All voltages are referenced to VSS = 0V
2. VIH (max) is acceptable 5.6V AC pulse width with â¤3ns of duration
3. VIL (max) is acceptable -2.0V AC pulse width with â¤3ns of duration
Note
1
1,2
1,3
AC OPERATING CONDITION (TA=0 to 70°C, VDD=3.3 ± 0.3V, VSS=0V)
Parameter
Symbol
Value
Unit
AC Input High / Low Level Voltage
VIH / VIL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
50
pF
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
Note
1
Revision 1.8 / Apr.01
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