HY57V161610D Datasheet, PDF (9/13 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610D
AC CHARACTERISTICS (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0V^Note1,2))
Paramter
RAS cycle time
Operation
Auto Refresh
RAS to CAS delay
RAS active time
RAS precharge time
RAS to RAS bank active delay
CAS to CAS bank active delay
Write command to data-in delay
Data-in to precharge command
Data-in to active command
DQM to data-in Hi-Z
DQM to data mask
MRS to new command
Precharge to data output Hi-Z
Power down exit time
Self refresh exit time
Refresh Time
-5
-55
-6
-7
Symbol
Unit
Min
Max
Min
Max
Min
Max
Min
Max
tRC
55
55
60
-
70
-
ns
tRRC
55
55
60
-
70
-
ns
tRCD
15
16.5
18
-
20
-
ns
tRAS
40
100K
38.5
100K
40
100K
45
100K
ns
tRP
3
3
3
-
3
-
CLK
tRRD
2
2
2
-
2
-
CLK
tCCD
1
1
1
-
1
-
CLK
tWTL
0
0
0
-
0
-
CLK
tDPL
1
1
1
-
1
-
CLK
tDAL
4
4
4
-
4
-
CLK
tDQZ
2
2
2
-
2
-
CLK
tDQM
0
0
0
-
0
-
CLK
tMRD
2
2
2
-
2
-
CLK
tPROZ
3
3
3
-
3
-
CLK
tPDE
1
1
1
-
1
-
CLK
tSRE
1
1
1
-
1
-
CLK
tREF
64
64
-
64
-
64
ms
Note
3
Rev. 4.0/Aug. 02
9