HY57V161610D Datasheet, PDF (7/13 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610D
AC CHARACTERISTICS (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0V^Note1,2)
Parameter
Symbol
System clock
cycle time
CL=3
CL=2
CL=1
Clock high pulse width
Clock low pulse width
Access time
from clock
CL=3
CL=2
CL=1
Data-out hold time
Data-Input setup time
Data-Input hold time
Address setup time
Address hold time
CKE setup time
CKE hold time
Command setup time
Command hold time
CLK to data output in low Z-
time
CLK to data output in high
Z-time
tCK3
tCK2
tCK1
tCHW
tCLW
tAC3
tAC2
tAC1
tOH
tDS
tDH
tAS
tAH
tCKS
tCKH
tCS
tCH
tOLZ
tOHZ
-5
Min
Max
5
-
-
1.75
1.75
4.5
1.5
1.5
1
1.5
1
1.5
1
1.5
1
2
2
5
-55
Min
Max
5.5
-
-
2
2
5
2
1.5
1
1.5
1
1.5
1
1.5
1
2
2
5.5
-6
Min
Max
6
-
10
-
-
-
2
-
2
-
-
5.5
-
6
-
-
2
-
1.5
-
1
-
1.5
-
1
-
1.5
-
1
-
1.5
-
1
-
2
-
2
6
-7
Min
Max
7
-
10
-
-
-
2.5
-
2.5
-
-
6
-
6
-
-
2.5
-
1.75
-
1
-
1.75
-
1
-
1.75
-
1
-
1.75
-
1
-
2
-
2
7
Unit
Note
ns
3
ns
4
ns
4
ns
3
ns
ns
4
ns
4
ns
4
ns
4
ns
4
ns
4
ns
4
ns
4
ns
ns
Rev. 4.0/Aug. 02
7